IPB081N06L3 G
Manufacturer:
Infineon
Mfr.Part #:
IPB081N06L3 G
Datasheet:
Description:
MOSFETs TO-263-3 SMD/SMT N-Channel number of channels:1 79 W 60 V Continuous Drain Current (ID):50 A 29 nC
| Parameter | Value |
|---|---|
| Gate Charge | 29 nC |
| Gate to Source Threshold Voltage | 1.2 V |
| Continuous Drain Current (ID) | 50 A |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 6.7 mΩ |
| Input capacitance | 4.9 nF |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Power Dissipation | 79 W |
| Drain to Source Breakdown Voltage (Vds) | 60 V |
| Number of Channels | 1 |
| Packaging | Reel |
| RoHS | Compliant |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 1
Distributors
pcbx
pcbxUnit Price$3.62611
Ext.Price$3.62611
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $3.62611 | $3.62611 |
| 10 | $3.13478 | $31.34780 |
| 25 | $2.89298 | $72.32450 |
| 50 | $2.66984 | $133.49200 |
| 100 | $2.46390 | $246.39000 |
| 300 | $2.39439 | $718.31700 |
| 500 | $2.32684 | $1163.42000 |
| 1000 | $2.26417 | $2264.17000 |